E. Marstein Et Al. , "Mechanisms of void formation in Ge implanted SiO2 films," NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4, pp.424-433, 2003
Marstein, E. Et Al. 2003. Mechanisms of void formation in Ge implanted SiO2 films. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4 , 424-433.
Marstein, E., Gunnaes, A., Serincan, U., Jorgensen, S., Olsen, A., Turan, R., ... Finstad, T.(2003). Mechanisms of void formation in Ge implanted SiO2 films. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4, 424-433.
Marstein, ES Et Al. "Mechanisms of void formation in Ge implanted SiO2 films," NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4, 424-433, 2003
Marstein, ES Et Al. "Mechanisms of void formation in Ge implanted SiO2 films." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4, pp.424-433, 2003
Marstein, E. Et Al. (2003) . "Mechanisms of void formation in Ge implanted SiO2 films." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.207, no.4, pp.424-433.
@article{article, author={ES Marstein Et Al. }, title={Mechanisms of void formation in Ge implanted SiO2 films}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, year=2003, pages={424-433} }