HASANLI, N. 2015. Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.38 , 8-12.

HASANLI, N., (2015). Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.38, 8-12.

HASANLI, NIZAMI. "Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.38, 8-12, 2015

HASANLI, NIZAMI. "Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.38, pp.8-12, 2015

HASANLI, N. (2015) . "Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.38, pp.8-12.

@article{article, author={NIZAMI HASANLI}, title={Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2015, pages={8-12} }