Gullu, H. H. Et Al. 2020. Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.2 , 1566-1573.

Gullu, H. H., Isik, M., Delice, S., Parlak, M., & Gasanly, N., (2020). Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.2, 1566-1573.

Gullu, H. Et Al. "Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.2, 1566-1573, 2020

Gullu, H. H. Et Al. "Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.2, pp.1566-1573, 2020

Gullu, H. H. Et Al. (2020) . "Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.2, pp.1566-1573.

@article{article, author={H. H. Gullu Et Al. }, title={Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2020, pages={1566-1573} }