Marstein, E. Et Al. 2004. Introduction of Si/SiO2 interface states by annealing Ge-implanted films. JOURNAL OF APPLIED PHYSICS , vol.96, no.8 , 4308-4312.

Marstein, E., Gunnaes, A., Olsen, A., Finstad, T., Turan, R., & Serincan, U., (2004). Introduction of Si/SiO2 interface states by annealing Ge-implanted films. JOURNAL OF APPLIED PHYSICS , vol.96, no.8, 4308-4312.

Marstein, ES Et Al. "Introduction of Si/SiO2 interface states by annealing Ge-implanted films," JOURNAL OF APPLIED PHYSICS , vol.96, no.8, 4308-4312, 2004

Marstein, ES Et Al. "Introduction of Si/SiO2 interface states by annealing Ge-implanted films." JOURNAL OF APPLIED PHYSICS , vol.96, no.8, pp.4308-4312, 2004

Marstein, E. Et Al. (2004) . "Introduction of Si/SiO2 interface states by annealing Ge-implanted films." JOURNAL OF APPLIED PHYSICS , vol.96, no.8, pp.4308-4312.

@article{article, author={ES Marstein Et Al. }, title={Introduction of Si/SiO2 interface states by annealing Ge-implanted films}, journal={JOURNAL OF APPLIED PHYSICS}, year=2004, pages={4308-4312} }