Rosinski, M. Et Al. 2007. Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials. Synthesis and Surface Engineering of Three-Dimensional Nanostructures , (Boston, MA, United States Of America), 38-43.

Rosinski, M., Wolowski, J., YERCİ, S., Parys, P., TURAN, R., Badziak, J., ... Czarnecka, A.(2007). Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials . Synthesis and Surface Engineering of Three-Dimensional Nanostructures (pp.38-43). Boston, MA, United States Of America

Rosinski, Marcin Et Al. "Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials," Synthesis and Surface Engineering of Three-Dimensional Nanostructures, Boston, MA, United States Of America, 2007

Rosinski, Marcin Et Al. "Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials." Synthesis and Surface Engineering of Three-Dimensional Nanostructures , Boston, MA, United States Of America, pp.38-43, 2007

Rosinski, M. Et Al. (2007) . "Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials." Synthesis and Surface Engineering of Three-Dimensional Nanostructures , Boston, MA, United States Of America, pp.38-43.

@conferencepaper{conferencepaper, author={Marcin Rosinski Et Al. }, title={Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials}, congress name={Synthesis and Surface Engineering of Three-Dimensional Nanostructures}, city={Boston, MA}, country={United States Of America}, year={2007}, pages={38-43} }