R. Turan Et Al. , "Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5, pp.587-593, 2001
Turan, R. Et Al. 2001. Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5 , 587-593.
Turan, R., Aslan, B., Nur, O., Yousif, M., & Willander, M., (2001). Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5, 587-593.
Turan, RAŞİT Et Al. "Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5, 587-593, 2001
Turan, RAŞİT Et Al. "Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5, pp.587-593, 2001
Turan, R. Et Al. (2001) . "Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.72, no.5, pp.587-593.
@article{article, author={RAŞİT TURAN Et Al. }, title={Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2001, pages={587-593} }