Tevke, A. Et Al. 1998. InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy. SOLID-STATE ELECTRONICS , vol.42, no.6 , 1039-1044.

Tevke, A., Besikci, C., Van Hoof, C., & Borghs, G., (1998). InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy. SOLID-STATE ELECTRONICS , vol.42, no.6, 1039-1044.

Tevke, A Et Al. "InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy," SOLID-STATE ELECTRONICS , vol.42, no.6, 1039-1044, 1998

Tevke, A Et Al. "InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy." SOLID-STATE ELECTRONICS , vol.42, no.6, pp.1039-1044, 1998

Tevke, A. Et Al. (1998) . "InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy." SOLID-STATE ELECTRONICS , vol.42, no.6, pp.1039-1044.

@article{article, author={A Tevke Et Al. }, title={InSb infrared p-i-n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy}, journal={SOLID-STATE ELECTRONICS}, year=1998, pages={1039-1044} }