Cakmak, H. Et Al. 2021. Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.68, no.3 , 1006-1010.

Cakmak, H., Ozturk, M., Ozbay, E., & Imer, B., (2021). Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.68, no.3, 1006-1010.

Cakmak, Huseyin Et Al. "Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications," IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.68, no.3, 1006-1010, 2021

Cakmak, Huseyin Et Al. "Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications." IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.68, no.3, pp.1006-1010, 2021

Cakmak, H. Et Al. (2021) . "Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications." IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.68, no.3, pp.1006-1010.

@article{article, author={Huseyin Cakmak Et Al. }, title={Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, year=2021, pages={1006-1010} }