G. Koekbudak Et Al. , "Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1, 2021
Koekbudak, G. Et Al. 2021. Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1 .
Koekbudak, G., Kececi, A. E., Nasser, H., & TURAN, R., (2021). Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1.
Koekbudak, Gamze Et Al. "Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1, 2021
Koekbudak, Gamze Et Al. "Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1, 2021
Koekbudak, G. Et Al. (2021) . "Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.39, no.1.
@article{article, author={Gamze Koekbudak Et Al. }, title={Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, year=2021}