Yuruk, H. Et Al. 2021. Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , vol.68, no.7 , 5606-5615.

Yuruk, H., KEYSAN, O., & Ulutas, B., (2021). Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , vol.68, no.7, 5606-5615.

Yuruk, Huseyin, OZAN KEYSAN, And Baris Ulutas. "Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs," IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , vol.68, no.7, 5606-5615, 2021

Yuruk, Huseyin Et Al. "Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs." IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , vol.68, no.7, pp.5606-5615, 2021

Yuruk, H. KEYSAN, O. And Ulutas, B. (2021) . "Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs." IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , vol.68, no.7, pp.5606-5615.

@article{article, author={Huseyin Yuruk Et Al. }, title={Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs}, journal={IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS}, year=2021, pages={5606-5615} }